by on September 13, 2021
Resistive switching (RS) induced by electrical bias is noticed in numerous materials, together with 2D hexagonal boron nitride (hBN), which has been used in resistive random entry reminiscences (RRAMs) in recent years. For practical high-density, cross-point memory arrays, in contrast with bipolar memories, nonpolar (or unipolar) devices are preferable by way of peripheral circuit design and storage density. The non-risky nonpolar RS phenomenon of hBN-based RRAMs with Ti/hBN/Au structure as a prototype is reported. Stable guide DC switching for ≈103 cycles with a median window over 5 orders of magnitude is demonstrated. After figuring out a doable mechanism related to the Joule heat that contributes to the rupture of conductive filaments in nonpolar RS operations, this mechanism is validated by analyzing the prevalence of the "Re-set" course of. Although the intriguing physical origin nonetheless requires more complete studies, the achievement of nonpolar RS ought to make it more feasible to make use of hBN in sensible RRAM expertise.
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